Pressure Control Strategies to Provide Uniform Treatment Streams in the Manufacture of Microelectronic Devices

ABSTRACT

The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

PRIORITY

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/646,485, filed Mar. 22, 2018, titled “Systems and Method forNano-Aerosol Gas and Pressure Control,” the entire disclosure of whichis incorporated herein by reference for all purposes.

FIELD OF THE INVENTION

This disclosure relates to systems and methods for treating the surfaceof a microelectronic substrate in a vacuum pressure chamber withtreatment streams(s), and in particular for removing objects from themicroelectronic substrate using pressurized fluid material that isdispensed as one or more fluid streams through one or more nozzles intothe chamber and at the substrate, wherein pressure control strategiesare used to control pressures of the incoming, pressurized fluidmaterial supplied to the nozzle(s) as well as the vacuum chamberpressure.

BACKGROUND OF THE INVENTION

Many processes used in the manufacturing of microelectronic devicesinvolve positioning one or more microelectronic substrates, e.g.,in-process devices at various stages of manufacture, into a sealedchamber. One or more treatment fluids are supplied to one or morenozzles and then dispensed into the chamber to treat the substrate(s) inthe desired manner. Often, the fluids are dispensed directly at thesubstrate surface(s). Exemplary treatments can be used to depositmaterial, remove material, chemically alter surfaces, physically altersurfaces, rinse surfaces, remove particles or other contaminants ordebris from surfaces, and the like.

Treatment processes using one or more treatment streams dispensedthrough one or more nozzles at the substrate are widely known and usedto remove particles and other contamination from substrate surfaces.These treatments generally rely on the energy of fluid streams dispensedat high velocity to dislodge and carry away the contamination. Some ofthese treatments may also incorporate aspects that chemically alter thesurface or the contamination in order to make it easier for the highvelocity streams to dislodge and carry away the contamination. In someinstances, the streams are derived from pressurized and optionallycooled streams that are dispensed into a vacuum chamber in order tocarry out a treatment. Other embodiments may be use pressurized fluidsthat are heated. Embodiments of these treatments including pressurizedand cryogenically cooled feed streams are referred to in the industry ascryogenic cleaning treatments.

TEL FSI, Inc. (Chaska, Minn.) manufactures and markets a series of toolsystems under the brand indicia “ANTARES™” that are useful to carry outcryogenic cleaning treatments in the manufacture of microelectronicdevices. The tools in the ANTARES™ series are automated, single-wafer,systems useful for processing wafers (including 200 nm or 300 mmwafers). Each system uses cryogenic aerosol technology to safely removenanoscale particles from workpiece surfaces. Unlike conventional wettechnologies, this all-dry process reduces defects and minimizes risksof damaging the wafer surface, even on metal and low-k films. The toolsof the ANTARES™ series offer enhanced defect removal and are suitablefor treating a wide range of materials.

In a typical cryogenic cleaning treatment, such as exemplary processesused by the tools of the ANTARES™ series, the substrate to be cleaned(e.g. a semiconductor wafer) is typically held in a horizontalorientation on a chuck inside a sealed chamber. The chamber often isunder vacuum. At least one expansion nozzle is positioned over thesubstrate surface during processing. The nozzle(s) include at least oneoutlet to dispense at least one stream of treatment material at thesubstrate surface. In many modes of practice, a pressurized and cooledfluid, which may be a mixture of two or more constituents, is suppliedto the nozzle. In some modes of practice, the incoming feed desirably ismaintained under pressure and temperature conditions that avoid theformation of liquid material in the supply line, as undue liquidformation in the feed could lead to increased contamination risk and orincreased risk of damaging sensitive device features. When thepressurized and cooled fluid is dispensed from the nozzle into the lowerpressure regime of the chamber, the fluid is converted into energetic,high velocity streams. These streams may include gas jets and/or spraysof gas, gas clusters, liquid droplets, and/or solid particles. Thesprays of particles or droplets also are referred to as aerosols. Thesprays in some instances may include very finely sized particles thatmay be sized on a nanoscale, e.g., as having a particle size in therange from 5 nm to 100 nm. Due to the small, potentially nano-scale sizeof such particles, the resultant spray may be referred to in theindustry as a nano-aerosol. These high velocity jets and/or aerosols,including the nano-aerosols, effectively dislodge and removecontaminants such as particles from the surface of the substrate.

FIG. 1 (prior art) shows one example of a typical design for a cleaningsystem 10 used to carry out cleaning treatments. System 10 includes ahousing 12 defining a process vacuum chamber 14. Inside chamber 14,microelectronic substrate 16 is supported on a chuck 18 that may berotatable and/or translatable. Exhaust pathway 22 is coupled to asuitable vacuum pump (not shown) in order to exhaust materials from thechamber 14. A motorized butterfly throttle valve 24 is used to throttlethe flow of exhausted material through the exhaust pathway 22 in orderto control the vacuum pressure inside chamber 14. Pressurized andoptionally cooled or heated fluid from one or more suitable sources 26is supplied to the vacuum process chamber 14 through supply line 28. Thepressurized fluid is expanded and dispensed into chamber 14 throughnozzle 30 to generate a stream 31 to treat the substrate 16.

System 10 includes a control network system 36 in order to control tooloperations, including chamber pressure and the mass flow rate of thefluid into the chamber 14. Control network system 36 includes computer38, throttle valve controller 40, motorized butterfly throttle valve 24,mass flow controller (MFC) 32, pressure transducer 20, and pressuretransducer 34. MFC 32 may incorporate a thermal mass flow meter forrapid flow rate monitoring. Control network system 36 also includesnetwork communication lines 42, 44, 46, 48, and 50 interconnecting thesecomponents to allow network communications to occur.

To control chamber pressure, pressure transducer 20 senses the pressureinside chamber 14 and sends sensed pressure information to throttlevalve controller 40 via communication line 44. Computer 38 sends achamber pressure set point to throttle valve controller 40 via line 42.Using the chamber pressure setpoint and chamber pressure informationprovided by pressure transducer 20, controller 40 uses a suitablecontrol algorithm (e.g. PID loop or the like) to determine the error,e.g., difference or ratio, between the sensed chamber pressure and thedesired chamber pressure set-point. Based on this error, controller 40sends a control signal via line 46 that actuates the motorized butterflythrottle valve 24 more open to increase the vacuum conductance andthereby lower the chamber pressure or more closed to reduce the vacuumconductance and increase chamber pressure. Additionally, controller 40may send process information (e.g., pressure information, throttlesettings, and the like) to computer 38 via line 42 for purposes such asarchival purposes, to provide process information to an operatorinterface, for quality control, to monitor the process and triggeralarms and process shutdown if needed, and the like.

To help control the supply of treatment fluid material to the processchamber 14 via supply line 28 and nozzle 30, the supply line 28 isfitted with a mass flow controller (“MFC”) 32 to monitor and control theflow rate of material through supply line 28. Computer 38 sends a flowrate set point to the MFC 32 via line 48. The MFC 32 includes a sensorthat senses the flow rate of the fluid and a control valve that controlsthe flow rate. MFC 32 also includes suitable electronics and programmingto use a suitable control algorithm (e.g. PID loop or the like) todetermine the error, e.g., difference or ratio, between the sensed flowrate and the desired flow rate setpoint. Based on this error and to moreclosely match the flow rate to the desired setpoint, MFC 32 sends acontrol signal that actuates the MFC valve more open to increase theflow rate or more closed to reduce the flow rate. The fluid exiting theMFC 32 then flows into the vacuum chamber 14 through nozzle 30. Thepressure of the feed may vary as control is implemented to hold the massflow rate constant. Additionally, MFC 32 may send process information(e.g., sensed flow rate, control valve position, and the like) tocomputer 38 via line 48 for purposes such as archival purposes, toprovide process information to an operator interface, for qualitycontrol, to monitor the process and trigger alarms and process shutdownif needed, and the like.

Supply line 28 also is fitted with a pressure transducer 34 to monitorthe pressure of the fluid flow fed from the source(s) 26 to the massflow controller 32. In this set-up, pressure readings from pressuretransducer 34 are not included in a control loop associated with flowrate monitoring and control by the MFC 32.

FIG. 2 (prior art) shows a design modification of system 10. This designmodification is implemented in the ANTARES systems commerciallyavailable from TEL FSI, Chaska, Minn. The commercially available systemsare useful to carry out cryogenic cleaning treatments using treatmentstreams such as aerosol sprays including gas clusters.

In comparison to the embodiment shown in FIG. 1, system 10 in FIG. 2 ismodified to further include a cooling device 52 and additional pressuretransducer 54 fitted onto supply line 28 between MFC 32 and the coolingdevice 52. Additionally, network communication line 56 connects theadditional pressure transducer 54 to computer 38. System 10 of FIG. 2uses the same strategies to control chamber pressure and feed flow rateas used with respect to system 10 in FIG. 1. In a similar fashion tosystem 10 in FIG. 1, the modified system 10 of FIG. 2 also allows thepressure of the feed to vary as control is implemented to hold the flowrate constant. The pressure information acquired by sensor 54 are notintegrated into this flow rate control loop.

In one embodiment the cooling device 52 is a Dewar flask containing acoil through which the fluid material flows. The flask houses liquidnitrogen outside the coil that is in thermal contact with the coils in amanner effective to cool the material flowing through the coil tocryogenic temperatures. The pressurized and cooled gas exiting the coilof the Dewar flask is then directed through the expansion nozzle 30 intothe processing chamber 14 to provide treatment stream 31. The expansionnozzle 30 of FIG. 2 includes an orifice that restricts the flow rate offluid, e.g., gas, through nozzle 30. This backs up pressure on the inletside of the orifice.

System 10 as configured in FIG. 1 or 2 rely upon flow rate monitoringand control to supply a pressurized and cooled fluid feed to the nozzle30. The pressure of the feed is allowed to vary as flow rate iscontrolled. Even when the flow rate is accurately monitored andcontrolled, variations in the feed supply may still occur that canimpact process uniformity within a treatment for a particular workpieceor among treatments for multiple workpieces. In other words, even thoughflow rate is accurately controlled, process performance and results maystill be less uniform than might be desired as a function of time.

Chamber matching among different process chambers also is a concern.Some tools may incorporate multiple process chambers, and multiple toolsmay be used to handle fabrication at one or more different facilities.Chamber matching refers to the goal to carry out consistent, uniformtreatments from chamber to chamber and tool to tool. Chamber matchingcan be difficult to achieve in practice, as it can be challenging tomachine different chambers and tools exactly the same. Asmicroelectronic device features become smaller and smaller, and even iftools used to make these products are manufactured with great accuracy,there is still a variation in tool features that can impact the abilityto chamber match accurately. Secondly, there also may be a variation inhow a system is assembled, and this variation also can impact uniformityamong tools and different process chambers. For example, the plumbingvariations between a flow control device such as an MFC and a nozzleassociated with the flow control device can cause correspondingvariations in the resultant conductance or pressure drop at a given flowrate.

Accordingly, techniques to more accurately control the processperformance of treatment systems such as those shown in FIGS. 1 and 2are desired. Techniques to achieve chamber matching also are desired.

SUMMARY OF THE INVENTION

The present invention provides techniques to more accurately control theprocess performance of treatments in which microelectronic substratesare treated by pressurized fluids that are dispensed onto one or moresubstrate(s) in a vacuum process chamber. In the practice of the presentinvention, it has been discovered that control strategies that read andcontrol pressure features of a treatment system provide a more accurateway to control the uniformity of process performance as compared tomethods that attempt to achieve uniformity by holding mass flow rate ofa feed supply constant. For example, referring to the previously knownsystems of FIGS. 1 and 2, it has been discovered that relatively minorvariations in the pressure measured at pressure transducer 54 (e.g. a 1psi variation in a 20 psig pressure) have been shown to significantlychange process performance. Consequently, in treatment systems such asthese in which the pressure on the inlet side of a nozzle issignificantly higher than the pressure within the process chamber,controlling these pressures as well as the difference between thesepressures would be more important to provide uniform process performancethan simply maintaining a constant mass flow rate in which pressurecould vary significantly.

In representative embodiments of the present invention, therefore,control strategies are used that adjust mass flow rate responsive topressure readings in order to hold the pressure of a pressurized andcooled feed constant. In these embodiments, the mass flow rate will tendto vary in order to achieve and maintain pressure uniformity over timeand from chamber to chamber. This is contrasted to prior controlstrategies in which mass flow rate is controlled to be constant,allowing the pressure to vary. Also, the pressure uniformity achievesbetter chamber matching.

The present invention also is based at least in part upon anappreciation that the performance of a cryogenic cleaning treatment isvery dependent on the pressure of the pressurized and cooled fluid,e.g., a pressurized and cooled gas, supplied to the nozzle as well asthe pressure in the interior of the vacuum chamber. The pressuresthemselves as well as the pressure differential associated with theexpansion of the fluid from the higher pressure regime (associated withthe fluid entering the nozzle(s)) to the lower pressure regime(associated with the lower vacuum pressure inside the process chamber)greatly influences the cluster formation, velocity, and flow dynamicsthat all effect cleaning efficiency and damage to sensitive structureson the substrate. Precise control of these pressures and the pressuredifferential as provided by the present invention are important tooptimal and repeatable performance during a treatment of a workpiece aswell as among treatments of different workpieces.

The present invention also would help to make chamber matching easier.The pressure control strategies of the invention help to accommodate theimpact of hardware variation among different process chambers within atool and from tool to tool. A significant advantage, therefore, is thatthe present invention allows tools to be machined with less concern overmachine variation while still getting excellent chamber matching. Inother words, the present invention uses pressure control strategies toboost chamber matching to a level beyond what might be possible withaccurate machining expertise alone. The pressure control strategies alsohelp accommodate variations such as flow conductance or pressure drop inorder to help improve chamber matching.

In one aspect, the present invention relates to a method of treating asubstrate, comprising the steps of:

-   -   a) providing a microelectronic substrate in a vacuum process        chamber, wherein the vacuum process chamber has a controlled        vacuum pressure;    -   b) supplying an incoming pressurized fluid to a flow restriction        device,    -   c) using the flow restriction device to spray the incoming        pressurized fluid into the vacuum process chamber such that the        spray impacts the microelectronic substrate; and    -   d) adjusting the flow rate of the incoming pressurized fluid in        a manner effecting to maintain the incoming pressurized fluid as        supplied to the flow restriction device at a controlled        pressure.

In another aspect, the present invention relates to a method of treatinga substrate, comprising the steps of:

-   -   a) providing a microelectronic substrate in a vacuum process        chamber, wherein the vacuum process chamber has a controlled        vacuum pressure;    -   b) supplying an incoming pressurized fluid to a flow restriction        device,    -   c) using the flow restriction device to spray the incoming        pressurized fluid into the vacuum process chamber as a spray        such that the spray impacts the microelectronic substrate;    -   d) providing a pressure signal that is indicative of an incoming        pressure of the incoming, pressurized fluid supplied to the flow        restriction device;    -   e) providing a setpoint pressure signal indicative of a desired        incoming pressure of the incoming pressurized fluid supplied to        the flow restriction device;    -   f) determining a control signal based at least in part on a        comparison of the incoming pressure signal and the setpoint        pressure signal, said control signal being an indication of a        difference between the incoming pressure signal and the setpoint        pressure signal; and    -   g) adjusting the flow rate of the incoming pressurized fluid to        help control the pressurized incoming fluid at the desired        setpoint pressure.

In another aspect, the present invention relates to a apparatus,comprising:

-   -   a) a sub-atmospheric process chamber comprising an interior        volume having a chamber vacuum pressure;    -   b) a substrate chuck disposed within the interior volume; and    -   c) a fluid supply line that delivers a fluid to the interior        volume at a controllable flow rate and a controllable pressure,        the fluid supply line comprising:        -   i) a flow control device that controls the flow rate of the            fluid through the supply line; and        -   ii) a flow restriction device through which the fluid is            dispensed into the process chamber from the supply line; and        -   iii) a pressure transducer that measures the controllable            pressure of the fluid in the supply line;    -   d) a vacuum pump coupled to the process chamber in a manner        effective to control the chamber vacuum pressure; and    -   e) a control system coupled to the flow restriction device and        the pressure transducer in a manner effect to adjust the flow        rate of the fluid in the supply line as a function of pressure        readings obtained by the pressure transducer in order to control        the pressure of the fluid in the supply line at a desired        pressure setpoint.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 (prior art) schematically shows a treatment system of the priorart incorporating a conventional control system to control thecharacteristics of the pressurized and cooled fluid supplied to atreatment carried out in a vacuum process chamber.

FIG. 2 (prior art) schematically shows a modification of the treatmentsystem of FIG. 1 in which the control system incorporates additionalfeatures to control the characteristics of the pressurized and cooledfluid supplied to a treatment carried out in a vacuum process chamber.

FIG. 3 schematically shows a treatment system incorporating pressurecontrol strategies in accordance with the present invention.

FIG. 4 schematically shows an alternative embodiment of a treatmentsystem that uses pressure control strategies of the present invention.

FIG. 5 schematically shows an alternative embodiment of a treatmentsystem that uses pressure control strategies of the present invention.

DETAILED DESCRIPTION OF PRESENTLY PREFERRED EMBODIMENTS

Methods for selectively removing objects from a microelectronicsubstrate are described in various embodiments. One skilled in therelevant art will recognize that the various embodiments may bepracticed without one or more of the specific details, or with otherreplacement and/or additional methods, materials, or components. Inother instances, well-known structures, materials, or operations are notshown or described in detail to avoid obscuring aspects of variousembodiments of the disclosure. Similarly, for purposes of explanation,specific numbers, materials, and configurations are set forth to providea thorough understanding of the systems and method. Nevertheless, thesystems and methods may be practiced without specific details.Furthermore, it is understood that the various embodiments shown in thefigures are illustrative representations and are not necessarily drawnto scale.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, material, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the invention, but do not denote that theyare present in every embodiment. Thus, the appearances of the phrases“in one embodiment” or “in an embodiment” in various places throughoutthis specification are not necessarily referring to the same embodimentof the invention. Furthermore, the particular features, structures,materials, or characteristics may be combined in any suitable manner inone or more embodiments. Various additional layers and/or structures maybe included and/or described features may be omitted in otherembodiments.

“Microelectronic substrate” or “substrate” or “workpiece” as used hereingenerically refers to the object being processed in accordance with theinvention. The microelectronic substrate may include any materialportion or structure of a device, particularly a semiconductor or otherelectronics device, and may, for example, be a base substrate structure,such as a semiconductor substrate or a layer on or overlying a basesubstrate structure such as a thin film. Thus, the substrate is notintended to be limited to any particular base structure, underlyinglayer or overlying layer, patterned or unpatterned, but rather, iscontemplated to include any such layer or base structure, and anycombination of layers and/or base structures. The description below mayreference particular types of substrates, but this is for illustrativepurposes only and not limitation. In addition to microelectronicsubstrates, the techniques described herein may also be used to cleanreticle substrates that may be used to patterning of microelectronicsubstrates using photolithography techniques.

In some embodiments, the present invention provides improved featuresand/or improved modes of practicing the systems 10 of FIGS. 1 and 2. Forexample, FIG. 3 shows one example of such a treatment system 100 usefulto carry out cryogenic cleaning treatments, wherein the systemincorporates pressure control strategies of the present invention. Fromone perspective, system 100 is an improved version of system 10 of FIG.2, wherein system 100 incorporates an additional control component inthe form of flow set-point controller 158 and corresponding networkcommunication lines 160 and 162. As illustrated, controller 158 is shownas a separate control component relative to computer 138, but controller158 could also be incorporated into computer 138 and/or flow controldevice 132, if desired.

In use, and as described in more detail below, these additionalcomponents 158, 160, and 162 and their additional functionalitiesprovide strategies by which pressure readings are used to adjust flowrate using a dynamic flow rate set point in order to hold a feedpressure at a desired pressure setpoint. In practical effect, thecontrol strategy implemented in FIG. 3 is a nested control loop strategyin which pressure is controlled in an outer control loop, and flow rateis controlled in an inner control loop.

In more detail, system 100 includes housing 112 defining a vacuumprocess chamber 114. Inside chamber 114, a microelectronic substrate 116is supported on a chuck 118, which may be rotatable and/or translatable.Exhaust pathway 122 is coupled to a suitable vacuum system (not shown)in order to exhaust materials from the chamber 114. A suitable flowcontrol valve such as a motorized butterfly throttle valve 124 is usedto throttle the flow of exhausted material through the exhaust pathway122, thus helping to control the pressure inside chamber 114. Themotorized butterfly throttle valve 124 may be actuated to choke or openthe exhaust pathway 122. Generally, setting the valve 124 to be moreclosed tends to reduce the vacuum conductance pulling material from thechamber 114. This tends to increase chamber pressure. Setting the valve124 to be more open tends to increase the vacuum conductance pullingmaterial from the chamber 114. This tends to lower chamber pressure.Hence, monitoring chamber pressure and using a suitable controlalgorithm to adjust valve 124 based on those pressure readings and thedesired chamber pressure set point can be used to help maintain chamberpressure at the desired set point.

The vacuum system and corresponding control components may be configuredand actuated to maintain the vacuum process chamber 114 at a pressurethat may be less than 35 Torr, or more preferably less than 20 Torr.Such low chamber pressures enhance the formation of fluid streams ofgas, gas clusters, liquid droplets, and/or solid particles when thepressurized and cooled material is dispensed into the low pressureprocess chamber 114 through one or more fluid restriction devices suchas nozzle 130. Pressure transducer 120 senses the pressure of processchamber 114.

The nozzle 130 includes an inlet 133 that receives the pressurized andoptionally cooled fluid from supply line 128. Nozzle 130 includes outlet137 through which the fluid is dispensed as one or more stream(s) 131into chamber 114. In some embodiments, the inlet 133 may have a diameterin the range from about 0.1 mm to about 4 mm. Outlet 137 may have anoutlet diameter in the range from 0.1 mm to 6 mm. Often, outlet 137 islarger in diameter than inlet 133. In some instances, nozzle 130incorporates a constriction orifice (i.e., the narrowest portion of theflow pathway) between inlet 133 and outlet 137. The throat diameter ofthe constriction orifice desirably is smaller than the inlet or outletdiameters. In some embodiments, for example, the throat diameterprovides an orifice that has about 85% to 95% of the cross-sectionalarea of the nozzle inlet 133. In other instances, inlet 133 serves as aconstriction orifice such that the inlet 133 is 85% to 95% of thecross-sectional area of the nozzle region adjacent to the inside of theinlet 133.

As illustrated, system 100 includes a single nozzle 130. However, system130 may include two or more nozzles. These may be incorporated into thesame spray bar or provided by two or more independent nozzle componentsthat independently dispense material into the chamber 114.

Pressurized fluid from one or more suitable sources 126 is optionallycooled and supplied to the nozzle 130 through supply line 128. As usedherein, “fluid” means a flowable material including one or moredifferent kinds of constituents. Hence, a fluid may be formed from asingle ingredient such as only argon or only nitrogen. Fluids alsoinclude fluid mixtures that may include two or more constituents, suchas a combination of argon and nitrogen. Such fluids may be gases,solids, and/or liquids. Preferably, the fluids comprise at least onegas. Examples of suitable gases or liquids include one or more ofnitrogen, argon, He, hydrogen, Xe, CO₂, neon, krypton, combinations ofthese, and the like.

Cryogenic fluid cleaning is a technique used to dislodge contaminants byimparting sufficient energy from gas, gas clusters, liquid droplets, orsolid particles in a fluid stream, e.g., aerosol particles or gas jetparticles (e.g., gas clusters), to overcome the adhesive forces betweenthe contaminants and the microelectronic substrate. Hence, producing orexpanding cryogenic fluid to form a spray comprising particles of theright size and velocity may be desirable. In order to influence thevelocity of a fluid stream, a carrier gas can be incorporated into theresultant fluid mixture to enhance the cleaning of the contaminants onthe substrate. Use of a carrier gas helps to increase the velocity ofthe resultant fluid spray and facilitates expansion of the dispensedfluid into the chamber 114. This technique satisfies a growing need inthe semiconductor industry to enhance cleaning of substrates with smallcontaminates that traditional aerosol techniques are limited due toinsufficient kinetic energy. Examples of suitable carrier gases includenitrogen, hydrogen, helium, neon, combinations of these, and the like.

In one embodiment, the pressurized fluid is argon. In anotherembodiment, the pressurized and optionally cooled fluid is nitrogen. Inanother embodiment, the pressurized and cooled fluid comprises argon inadmixture with nitrogen at a molar ratio of argon to nitrogen in therange from 1:100 to 100:1, preferably 1:20 to 20:1, more preferably 1:10to 10:1. In another embodiment, the pressurized fluid is CO₂. In anotherembodiment, the pressurized fluid is CO₂ in admixture with nitrogen at amolar ratio of CO₂ to nitrogen in the range from 1:100 to 100:1,preferably 1:20 to 20:1, more preferably 1:10 to 10:1. In thoseembodiments comprising nitrogen, CO₂, and/or argon, the fluid mayfurther comprise one or more additional gases or liquids as well. In oneembodiment, the additional gas or liquids comprise helium, hydrogen,neon, or a combination of these wherein the molar ratio of the totalamount of the additional gas(es) to the argon, carbon dioxide and/ornitrogen is in the range from 1:100 to 100:1, 1:20 to 20:1; preferably1:1 to 10:1. In another embodiment, the pressurized fluid is CO₂ and atleast one of hydrogen and/or helium, wherein the molar ratio of CO₂ tothe total amount of hydrogen and/or helium is in the range from 1:100 to100:1, preferably 1:20 to 20:1, more preferably 1:10 to 10:1. In thoseembodiments including hydrogen and helium, the molar ratio of hydrogento helium desirably is in the range from 1:100 to 100:1, preferably 1:20to 20:1, more preferably 1:10 to 10:1. In those embodiments includingneon and at least one of hydrogen and helium, the molar ratio of neon tothe total amount of hydrogen and helium is in the range from 1:100 to100:1, preferably 1:20 to 20:1, more preferably 1:10 to 10:1.

Specific mixtures include argon and helium; argon and hydrogen; argon,hydrogen, and helium; nitrogen and helium; nitrogen and hydrogen;nitrogen, hydrogen, and helium; carbon dioxide and helium; carbondioxide and hydrogen; carbon dioxide and nitrogen; carbon dioxide,hydrogen, and helium; argon and neon; argon, neon and hydrogen; nitrogenand neon; nitrogen, neon, and hydrogen; carbon dioxide and neon; andcarbon dioxide, neon, and hydrogen.

In a preferred aspect, the treatment fluid material is used by system100 in a manner effective to balance particle removal efficiency againsta risk of damaging sensitive structures on the substrate 116. Forexample, one aspect of addressing this balance can be achieved bycontrolling the phase characteristics of a fluid such as argon that isfed to the nozzle 130 and how close the supplied material is to its dewpoint. It is desirable, for instance, that the pressurized fluid insupply line 128 is maintained at pressures and temperatures so thatsubstantially all of the pressurized fluid in supply line 128 is in thegas phase as supplied to nozzle 130, avoiding condensation. Liquidformation in the supply line 128 can increase the risk of damagingsensitive features on substrate 116 due to the potential size and massof liquid droplets energetically dispensed into the chamber 114. Liquidcondensation in supply line 128 also may increase the risk of substratecontamination. Therefore, it is desirable to supply the pressurizedfluid in the gas phase while avoiding reaching or crossing the dew pointof the gas. A phase diagram of the fluid being used can help to selectappropriate pressures and temperatures to help ensure that thepressurized fluid is in the gas phase while avoiding formation of aliquid phase.

It has been determined empirically that the aggressiveness of cleaningcan be controlled based on how close the pressurized fluid is to its dewpoint. Generally, more aggressive cleaning results when the fluid iscloser to the dew point at a given pressure. For more aggressivecleaning, the pressurized fluid is a gas and may be at a temperaturethat is in a range from about 1 K to about 3 K from the dew point at agiven pressure. Less aggressive cleaning may be practiced when thepressurized fluid is a gas and may be at a temperature that is in therange from about 3 K to about 10 K from the dew point at a givenpressure. However, treatment fluids can be further away from the dewpoint and still form treatment streams to provide good cleaningperformance.

Without wishing to be bound by theory, a possible rationale to explainthis behavior can be suggested. Schematically, the tendency of a gassuch as argon to condense or form gas clusters can be viewed as afunction of how strongly the individual molecules or atoms want toassociate to form a liquid or gas cluster. The material can be viewed asbeing more “sticky” when this tendency is relatively stronger. Whileavoiding reaching or crossing the dew point boundary into the liquidregime, a gas generally becomes “stickier” by approaching but notreaching its dew point. It is believed, therefore, that the gas tends toform larger gas clusters closer to the dew point in the gas regime andsmaller gas clusters, if any, at a greater distance from the dew pointin the gas regime. It is further believed that a gas closer to its dewpoint provides more aggressive cleaning because such a gas forms largergas clusters.

Another important aspect of the present invention is to appreciate thatmonitoring and maintaining the uniformity of the feed pressure in supplyline 128 is a key element to achieve consistent and repeatable cleaningperformance and better chamber matching. In the practice of theinvention, flow rate is controllably adjusted, and therefore varies, tomaintain the pressure of the feed supplied to nozzle 130 relative to apressure set point. At the same time, the chamber pressure is alsocontrolled relative to a corresponding chamber pressure setpoint. Thedifference between these two pressures, therefore, also is necessarilycontrolled as a result.

The expansion nozzle 130 of FIG. 3 desirably includes an orifice thatrestricts the flow rate of fluid through nozzle 130. This backs uppressure on the inlet side of the orifice, so that the pressure on theinlet side of the orifice is significantly higher than the pressurewithin the chamber 114. This difference of pressure across the expansionnozzle 130 is important to achieve desired aerosol formation, velocityand flow dynamics. The pressure control strategies of the presentinvention allow improved control over these pressures and the differencebetween them.

System 100 includes a control network 136 in order to control thepressure characteristics of the fluid flowing into the chamber 114.Control network 136 also helps to control the pressure of chamber 114.By accurately controlling these two pressures, the difference betweenthese pressures is also controlled. One result is more consistentprocess performance and better chamber matching capabilities.

Control network system 136 includes primary controller 138, throttlevalve controller 140, motorized butterfly throttle valve 124, flowcontrolling device 132, flow set-point controller 158, temperaturesensor 139, temperature control device 152, pressure transducer 120,pressure transducer 134, and pressure transducer 154. The differentcomponents may be hardware or software based. Hardware may beincorporated into a single unit or deployed at multiple locations.

Control network system 136 also includes communication linksinterconnecting these components to allow network communications tooccur. Communication links include lines 142, 150, and 160interconnecting primary controller 138 with throttle valve 140, pressuretransducer 134 and flow set-point controller 158, respectively.Additional communication links include lines 144 and 146 betweenthrottle valve controller 140 and pressure transducer 120 and motorizedbutterfly throttle valve 124, respectively. Additional communicationlinks include line 166 between pressure transducer 154 and flow setpointcontroller 158 and line 162 between flow setpoint controller 158 andflow controlling device 132. Additionally, primary controller 138 iscoupled to temperature sensor 139 and temperature control device 152 bylines 155 and 157. The communication links may be wired or wireless.

Controller 138 may be configured to help control or assist multiplesystem functions. Controller 138 may include a memory and processor tostore and implement process recipes, communications, quality control,system monitoring, flow rates, pressures, temperatures, commandstructures, user interfaces, real time process information, historicalprocess information, feed supply, feed composition, temperature control,pressure control, heating control, chuck levitation and rotation, chucktranslation, substrate loading and unloading, substrate securement onthe chuck 118, process control feedback, and the like. Consequently, itcan be appreciated that the controller 138 may include the processcondition set points for the pressures and temperatures to apply thecontrol strategies of the present invention during cleaning treatments.Similarly, controller 138 can include user-selectable time and recipedetails for these treatments.

Beneficially, the functions and capabilities of controller 138 help tocontrol and/or maintain the quality or certain characteristics of thegas cluster and other dispensed streams to improve process consistencywithin a run, run-to-run in a tool, and tool-to-tool. For example, thegas cluster spray characteristics may be influenced by the supply linedimensions, supply temperature, supply pressure, chamber pressure,supply composition, and substrate temperature. The control techniques oralgorithms would control such variables to favorably impact stability,responsiveness, and impact on particle removal efficiency whengenerating the sprays.

The temperature control system 152 is installed on supply line 128between mass flow controller (MFC) 132 and nozzle 130 to allow thetemperature of the fluid feed to be regulated in a desired manner suchas to maintain a desired temperature or temperature profile. In someembodiments, temperature control system 152 includes a heater that maybeat the flowing fluid to a suitable temperature above ambienttemperature such as a temperature in the range from 300K to 350K,preferably 300K to 325K. The heater in some embodiments may include anyelectrical and/or other heating functionality to heat fluid feed flowingin supply line 128 to a desired temperature or temperature profile. Inan illustrative embodiment, the heater may include a resistive heatingelement that is thermally coupled to the supply line 128. Thetemperature of the flowing fluid may be adjusted by adjusting theelectrical power fed to the resistive heating element. Often, theelectrical power fed to the heating element is controlled by pulse widthmodulation in which the electrical feed is pulsed on an off atadjustable intervals. Hence, if the fluid temperature is greater thanthe desired set point, the amount of time that the pulses are off can beincreased in order to reduce power and lower the temperature. If thefluid temperature is less than the desired set point, the amount of timethat the pulses are on is increased in order to increase power andincrease the temperature.

In some embodiments, temperature control system 152 includes a coolingsystem that allows the flowing feed as supplied to nozzle 130 to bechilled to a suitable temperature below ambient temperature such as atemperature less than 298 K, or even less than 273 K, or even cryogenictemperatures in the range of 77 K to 270 K, or even in the range from 77K to 150K, or even in the range from 90K to 110K. In some embodiments,temperature control system 152 includes both heating and chillingcapabilities.

In one embodiment, the temperature control system 152 includes chillingfunctionality in the form of a Dewar flask containing a coil throughwhich the fluid material flows. The flask also houses liquid nitrogenoutside the coil that is in thermal contact with the coils in a mannereffective to cool the material flowing through the coil to cryogenictemperatures such as temperatures in the range from 77 K to 150K, oreven in the range from 90K to 110K. This allows a cooled and pressurizedfluid feed to be supplied to nozzle 130.

Temperature of material leaving the temperature control system 152 viasupply line 128 may be monitored by temperature sensor 139. Thetemperature readings may be used with a suitable control algorithm toadjust heating or chilling based on those temperature readings and thedesired temperature set point to help maintain chamber the temperatureat the desired set point.

The pressurized fluid exiting the temperature control system 152 isdirected via supply line 128 through the nozzle 130 into the processingchamber 114 to provide at least one treatment stream 131. Treatmentstream 131 impacts substrate 116 and thereby helps to remove particlesand other contamination from the surface of the substrate 116. Stream131 may be a gas stream or an aerosol containing gas clusters, liquiddroplets, or solid particles. In illustrative embodiments, the fluidstreams may include, but are not limited to, cryogenic aerosols and/orgas cluster jet (GCJ) streams that may be formed by the expansion of thefluid from a high pressure environment upstream of nozzle 130 (e.g.,greater than atmospheric pressure) to a lower pressure environment(e.g., sub-atmospheric pressure) of the process chamber 114.

Pressure transducer 154 is fitted to supply line 128 in order to takepressure readings from supply line 128 between the flow controllingdevice 132 and the temperature control device 152. It might be moredesirable to take such pressure readings closer to the inlet 133 of thenozzle 130. However, this might not be as practical as might be desireddue to the cryogenic temperature and contamination concerns.Consequently, the pressure of the pressurized and cooled gas fed tonozzle 130 is more conveniently measured upstream of cooling device 152by pressure transducer 154. Because the nozzle 130 incorporates arestriction orifice, the pressure as read at pressure transducer 154 isvery indicative of both the pressure within cooling device 152 as wellas near the entrance to the nozzle 130. Hence, an advantage ofincorporating a restrictive orifice in the nozzle is that the pressurein supply line 128 between the outlet 135 of the flow controlling device132 and the inlet 133 of nozzle 130 is substantially uniform. Thepressure of the fluid as measured by pressure transducer 154 preferablyis in the range from 5 psig to 800 psig, preferably 10 psig to 200 psig,more preferably 15 psig to 150 psig.

The flow controlling device 132 may be any suitable device that can beactuated to control the flow rate of material through supply line 128.For instance, the flow control device may be capable of varying thecross-sectional area of a fluid flow pathway to modulate the flow ratethrough the pathway. In this way, the flow control device may controlthe amount of fluid (i.e., the volumetric or mass flow rate) and therebycause corresponding changes in the pressure of the flowing materialdownstream of the flow control device. For example, increasing flow ratetends to cause a corresponding increase in pressure. Decreasing flowrate tends to reduce the pressure. In this way, flow rate can beadjusted in order to help maintain the flowing material at a desiredpressure.

In many embodiments, the flow control device 132 is a mechanical orpneumatic device. Examples of such devices include, but are not limitedto, a needle valve, a pinch valve, a diaphragm valve, a variable controlvalve, a flow control valve, a mass flow controller, a variable electricvalve, a variable pneumatic valve, or dome-loaded pressure regulator.For purposes of illustration, FIG. 3 shows flow control device 132 inthe form of a mass flow controller (MFC). Accordingly, flow controldevice 132 shall also be referred to herein as MFC 132. The MFC 132includes a sensor that senses the flow rate of the fluid and a controlvalve that controls the flow rate. Sensor readings and valve actuationare used to control the pressure of the fluid feed flowing throughsupply line 128 in a manner described further below. In illustrativeembodiments, the flow rate of fluid material controlled by the flowcontrol device 132 is in the range from 1 slm (Standard Liter perMinute) to 500 slm, even 20 slm to 300 slm.

As an additional capability, the MFC 132 and the cooling device 152allow the temperature and the pressure of the pressurized and cooledfluid to be independently adjusted in order to help control the phase ofthe material supplied to nozzle 130 and the characteristics of theresultant spray 131. In illustrative embodiments, the pressure andtemperature of the fluid feed supplied to the nozzle 130 may be set tocontrol the liquid and gas content of the feed. For example, thetemperature and pressure may be controlled to minimize, prevent, oreliminate as much liquid as is practical from the pressurized feedsupplied to the nozzle 130. For example, the fluid pressure may bemaintained to cause the pressurized and cooled fluid to be in a gasstate as supplied to nozzle 130 and to prevent too much of the feed frombeing in a liquid state (e.g., no more than 1 weight percent of the gasfeed is in a non-gas state) at a corresponding gas temperature. In otherembodiments, the pressure and temperature may be selected so thatgreater amount of the pressurized and cooled feed is in a liquid phase.For example, in some modes of practice, it may be desirable if a feedcontaining gas and liquid materials includes 10 weight percent or moreof liquid material.

The temperature and pressure characteristics used to obtain desired gasand liquid content will depend on the composition of the feed.Generally, phase diagrams of the system can be used to help selectsuitable temperature and pressure characteristics so that the feed is inthe gas phase and above the liquefaction or solidification temperatureboundaries of the phase diagram. The phase diagrams also can be used toselect pressure and temperatures useful to provide desired liquidcontent.

An optional pressure transducer 134 also is fitted onto supply line 128to take pressure readings on supply line 128 between source(s) 126 andthe MFC 132. Pressure transducer 134 helps to monitor the pressure ofthe fluid flow fed from the source(s) 126 to the mass flow controller132.

An illustrative mode of using pressure control strategies when usingsystem 100 of FIG. 3 will now be described with respect to carrying outa cleaning treatment using argon gas as the treatment fluid. Accordingto this illustrative practice, the controller 138 may direct a substratehandler (not shown) to place the substrate 116 on the chuck 118.Controller 138 adjusts the process conditions within the process chamber114 and the supply line 128 prior to exposing the substrate 116 to thespray 131. To carry out the cleaning treatment, argon gas is suppliedfrom source 126. The argon gas is supplied to nozzle 130 in cooled andpressurized conditions at 97.5 K and 34.5 psia is fed to nozzle 130 at160 slm (Standard Liters Per Minute) with a nozzle having a throat plateorifice of 0.092 inches. The argon gas is dispensed into process chamber114 under conditions effective to form stream 131 incorporating a sprayincluding gas clusters. The gas clusters energetically impact thesubstrate 116 to help remove contamination from the substrate surface.During the treatment, chuck 118 rotates and translates the substrate 116relative to the spray 131.

Control strategies of the present invention are used to maintain thechamber pressure, supply pressure of fluid in the supply line 128, andoptionally supply temperature of the fluid in the supply line 128 atdesired setpoints during the treatment. For example, as the chuck 118rotates and/or translates the substrate 116 under the nozzle 130,control strategies optionally may be implemented using readings fromtemperature sensor 139 to control temperature of the pressurized feedsupplied to nozzle 130. Sensor 139 sends temperature readings tocontroller 138 along line 157. Controller 139 uses those temperaturereadings to determine the temperature error between those readings and adesired temperature setpoint. A suitable control algorithm (such as PIDcontrol) is used to generate an appropriate temperature control signal.The temperature control signal is sent to temperature control device 152along line 155. This actuates the temperature control device 152 toeither raise or lower the temperature of the fluid as needed to moreclosely match the desired temperature setpoint.

Similarly, pressure transducer 120 obtains chamber pressure readings.The chamber pressure readings are sent to controller 140 via line 144.Controller 138 provides controller 140 with a desired chamber pressuresetpoint along line 142. For a typical measurement, controller 140compares a pressure reading to the desired chamber pressure setpoint.Controller 140 determines an error that indicates if the chamberpressure is too high or too low relative to the desired setpoint.Controller 140 may use a suitable control algorithm such as PID controlin order to generate a control signal. Controller 140 uses the controlsignal to correspondingly actuate motorized butterfly throttle valve 124in order to adjust the chamber pressure to more closely match thedesired set point. If the measured chamber pressure is too high, themotorized butterfly throttle valve 124 is actuated to be more open toallow a stronger vacuum conductance through exhaust pathway 122. Thislowers the chamber pressure. If the measured chamber pressure is toolow, the motorized butterfly throttle valve 124 is actuated to be moreclosed. This reduces the vacuum conductance through exhaust pathway 122.This increases chamber pressure.

Pressure control strategies of the present invention also guide controlof the argon gas pressure fed to the nozzle 130 through supply line 128.As implemented by the system of FIG. 3, this is a nested control loopstrategy in which flow rate control is nested inside a pressure controlloop. Pressure transducer 154 takes pressure readings of the fluidflowing through supply line 128. Using an analog transducer, thereadings may be continuous. A digital sensor may take pressure readingsat a suitable sample rate. The pressure readings are transmitted to thecontroller 158 along line 166. In parallel, controller 138 providescontroller 158 with a desired pressure set point along line 160.Controller 158 then compares each pressure reading, or a composite valueformed from a group of pressure readings (e.g., controller 158 mightcompute a composite that is a rolling average of some number, e.g., 3 to50, of pressure readings which might be consecutive or non-consecutivereadings) to the desired pressure set point. Controller 158 uses thiscomparison to determine an error that indicates if the pressure readingor pressure composite value is too high or too low. Controller 158 mayuse a suitable control algorithm such as PID control in order togenerate a control signal incorporating an updated flow rate set point.Controller 158 sends the control signal to MFC 132 via line 162. Thecontrol signal causes the MFC controller incorporated into MFC 132 toupdate the flow rate set point in a corresponding fashion. Hence, theflow rate set point used by MFC 132 to adjust flow rate is dynamic inthe sense that the flow rate setpoint will be adjusted as a function ofthe pressure reading error over time.

Mass flow controller 132 implements a flow rate control loop using theupdated flow rate setpoint. To accomplish this, MFC 132 senses the flowrate of the flowing fluid. MFC 132 compares the measured flow rate tothe updated flow rate set point to generate an error that indicates ifthe measured flow rate is too high or too low. MFC 132 then generates acontrol signal that is used to adjust the flow rate (which may be anincrease or decrease in the flow rate) to more closely match the updatedflow rate setpoint. This in turn causes a pressure change so that themeasured pressure reading more closely matches the desired pressure setpoint.

In this nested control strategy, errors in pressure are correlated todesired changes in the flow rate set point, and then the dynamicallyadjusted flow rate set point guides feedback control of the MFC 132. Thestrategy allows the flow rate and the flow rate set point to vary in acontrolled manner in order to hold the pressure in the supply line 128constant at the desired pressure set point. The strategy allows improvedchamber matching to compensate for variations in tool characteristicsassociated with different process chambers and different supply linesand nozzles associated with those chambers. In contrast, previoustechniques have tried to maintain a constant flow rate while allowingpressure excursions.

Nested control loops sometimes can be problematic due to delays that cancause oscillations or generally non-optimal control in some instances.Accordingly, FIG. 4 shows an embodiment of a modification of system 100by which pressure in the supply line 128 is controlled by a singlecontrol loop that directly varies flow rate responsive to pressuremeasurements made by pressure transducer 154. Use of a single controlloop rather than nested control loops also allows the flow set pointcontroller 158 to be removed from the system. As an additionaldifference, the MFC 132 of system 100 of FIG. 3 is replaced by gascontrol valve 168, which is connected to controller 138 by networkcommunication line 170. Except for these differences and the use of asingle control loop with respect to pressure transducer 154, system 100in FIG. 5 otherwise is the same as system 100 in FIG. 3. Note that theoptionally temperature communication lines 155 and 157 are not shown inFIG. 4 for purposes of clarity, but may be present in the system inorder to help control temperature if desired. In FIG. 4, the controlloops involving temperature control and chamber pressure controlimplemented in the same manner as is practiced for system 100 of FIG. 3.

Referring to FIG. 4, the variable flow control valve 168 desirably is inthe form of a variable restriction valve, such as a needle valve, thatis driven more open or more closed by a variable electric or pneumaticsignal. The valve 168 preferably has a relatively linear response offlow rate as a function of the input signal to improve the overallcontrol response. To apply a single loop control strategy to maintainthe pressure in the supply line 128 at a desired pressure set point,pressure transducer 154 takes pressure readings of the pressurized fluidin line 128. Pressure transducer sends the readings to controller 138.For each pressure reading or for each composite pressure value derivedfrom a plurality of individual pressure readings, controller 138compares the measured pressure or composite value to a pressure setpoint stored in memory. Controller 138 uses the comparison to generatean error that indicates whether the measured pressure or compositepressure is too high or too low. Controller 138 uses a suitable controlalgorithm, such as PID control, to generate a control signal. Thecontrol signal indicates a change in flow rate needed to more closelymatch the measured pressure or composite pressure to the pressure setpoint. Controller 138 sends the control signal directly to the controlvalve 168 along line 170. The resultant actuation opens the valve 168more if higher pressure is needed and closes the valve 168 more if lesspressure is needed. In practical effect, pressure is controlled byvarying the flow rate according to a theoretical or empiricalrelationship between the pressure error and the flow rate or flow rateadjustment needed to reduce the pressure error. Similarly to the nestedcontrol strategy of FIG. 3, the single loop control strategy of FIG. 4also allows the flow rate to vary in a controlled manner in order tohold the pressure in supply line 128 constant. As a difference, thecontrol loop of FIG. 4 eliminates a need to monitor flow rate. The flowcontrol loop nested inside the pressure control loop also is eliminatedby directly varying the flow control valve 168 in response to thepressure measurements taken by pressure transducer 154 and the deviationof those measurements from the desired pressure set point.

FIG. 5 shows an alternative embodiment of the system of FIG. 4 in whichthe valve 168 is replaced by a dome-loaded pressure regulator 172, anelectro-pneumatic (“E/P”) transducer 174, and a network communicationline 162 between the E/P transducer 174 and the dome-loaded regulator172. Except for implementing a single control loop using these modifiedcomponents, system 100 in FIG. 5 otherwise is identical to system 100 ofFIG. 4. Note that the optional temperature communication lines 155 and157 are not shown in FIG. 5 for purposes of clarity, but may be presentin the system in order to help control temperature if desired. In FIG.5, the control loops involving temperature control and chamber pressurecontrol implemented in the same manner as is practiced for system 100 ofFIG. 3.

Referring to FIG. 5, the pressure applied to the dome in the dome-loadedregulator 172 is supplied from the E/P transducer. A standard E/Ptransducer receives an analog electrical signal (e.g. 0-10 VDC or 4-20mA) and outputs a corresponding pressure of Clean Dry Air (CDA) or othersuitable pressurizing medium that is proportional to the incomingelectrical signal. If such a standard E/P transducer is used, thecontrol algorithm (such as a PID loop) may exist in the controller 138,in the E/P transducer 174 or in another suitable controller such as asolid state controller (not shown). For example, commercially availabledevices exist (e.g. such as those available from Tescom as used on theback pressure regulator on the dewar venting in TEL ANTARES™ toolavailable from TEL FSI, Chaska, Minn.) that include a PID algorithmwithin the E/P transducer device itself. This allows system 100 toincorporate a “smart” transducer that directly compares the pressuretransducer readings from pressure transducer 154 to a set-point andadjusts the CDA pressure output accordingly to modulate the flow rateand thereby bring the pressure in supply line 128 to the desiredset-point. For purposes of illustration, controller 138 incorporates thecontrol algorithm.

In operation, pressure transducer 154 takes pressure readings of thefluid flowing in supply line 128. Pressure transducer 154 sends thepressure readings to controller 138 via network communication line 156.For each reading or for a composite of a plurality of readings,controller 138 compares the reading or composite value to a desiredpressure set point. Controller 138 uses the comparison to generate anerror to indicate of the pressure reading or composite reading is toohigh or too low. Controller 138 generates a corresponding control signaland sends the signal to the E/P transducer 174. The E/P transducer isactuated to adjust the CDA pressure output accordingly. This in turnactuates valve 172 to adjust the flow rate to help reduce the pressureerror. Again, this strategy allows the flow rate to vary in a controlledmanner in order to hold the pressure in supply line 128 constant.

All patents, patent applications, and publications cited herein areincorporated by reference in their respective entireties for allpurposes. The foregoing detailed description has been given for clarityof understanding only. No unnecessary limitations are to be understoodtherefrom. The invention is not limited to the exact details shown anddescribed, for variations obvious to one skilled in the art will beincluded within the invention defined by the claims.

1. A method of treating a substrate, comprising the steps of: a)providing a microelectronic substrate in a vacuum process chamber,wherein the vacuum process chamber has a controlled vacuum pressure; b)supplying an incoming pressurized fluid to a flow restriction device,wherein the incoming pressurized fluid has a controllable d pressure; c)using the flow restriction device to dispense the incoming pressurizedfluid into the vacuum process chamber as a stream such that the streamimpacts the microelectronic substrate; d) obtaining pressure readings ofthe incoming pressurized fluid; and e) adjusting the flow rate of theincoming pressurized fluid as a function of the pressure readings in amanner effecting to maintain the incoming pressurized fluid as suppliedto the flow restriction device at a controlled pressure.
 2. The methodof claim 1, wherein the flow restriction device comprises a flowrestriction device inlet that receives the incoming pressurized fluid, aflow restriction device outlet through which the incoming pressurizedfluid is dispensed into the vacuum process chamber, and a restrictionorifice between the flow restriction device inlet and the flowrestriction device outlet.
 3. The method of claim 1, wherein step e)comprises the steps of: i) measuring a pressure characteristic of theincoming pressurized fluid supplied to the flow restriction device; ii)using the measured pressure characteristic to generate a current flowrate setpoint indicative of a flow rate effective to help correct anerror between the measured pressure characteristic and a pressuresetpoint; and iii) using the flow rate setpoint to control the flow rateof the incoming pressurized fluid, said flow rate adjustment helping tomaintain the incoming pressurized fluid at the controlled pressure.
 4. Amethod of treating a substrate, comprising the steps of: a) providing amicroelectronic substrate in a vacuum process chamber, wherein thevacuum process chamber has a controlled vacuum pressure; b) supplying anincoming pressurized fluid to a flow restriction device, wherein theincoming pressurized fluid has a controllable d pressure; c) using theflow restriction device to dispense the incoming pressurized fluid intothe vacuum process chamber as a stream such that the stream impacts themicroelectronic substrate; d) providing a pressure signal that isindicative of an incoming pressure of the incoming, pressurized fluidsupplied to the flow restriction device; e) providing a setpointpressure indicative of a desired incoming pressure of the incomingpressurized fluid supplied to the flow restriction device; f)determining a control signal based at least in part on a comparison ofthe incoming pressure signal and the setpoint pressure, said controlsignal being an indication of a difference between the incoming pressuresignal and the setpoint pressure; and g) using the control signal toadjust the flow rate of the incoming pressurized fluid to help controlthe pressurized incoming fluid at the desired pressure setpoint.
 5. Themethod of claim 4, wherein the flow restriction device comprises a fluidexpansion nozzle comprising: an inlet that receives the incomingpressurized fluid, said inlet having an inlet diameter between 0.1mm and4 mm; an outlet through which the incoming pressurized fluid isdispensed into the process chamber, said outlet having an outletdiameter in the range from 0.1 mm to 6 mm; and a throat between theinlet and the outlet, said throat having a throat diameter between 0.1mm and 4 mm.
 6. The method of claim 4, wherein the flow restrictiondevice comprises a fluid expansion nozzle comprising: an inlet thatreceives the incoming pressurized fluid, said inlet having an inletdiameter between 0.1 mm and 4 mm; and an outlet through which theincoming pressurized fluid is dispensed into the process chamber, saidoutlet having an outlet diameter in the range from 0.1 mm to 6 mm. 7.The method of claim 4, wherein step g) comprises using a mass flowcontroller to adjust the incoming pressure based, at least in part, on adifference between the incoming pressure signal and the setpointpressure.
 8. The method of claim 4, wherein step g) comprises using aflow control device that is adjusted by a process controller in order tocontrol the incoming pressure based, at least in part, on a differencebetween the incoming pressure signal and the setpoint pressure whereinthe flow control device is selected from the group consisting of aneedle valve, a pinch valve, a diaphragm valve, and/or a variablecontrol valve.
 9. The method of claim 4, wherein step g) comprisingusing a flow control device that is controlled by a process controllerto adjust the incoming pressure based, at least in part, on a differencebetween the incoming pressure signal and the setpoint pressure, saidflow control device being selected from the group consisting of avariable electric valve or a variable pneumatic valve.
 10. The method ofclaim 4, wherein step g) comprises using a flow control device that iscontrolled by a process controller to adjust the incoming pressurebased, at least in part, on a difference between the incoming pressuresignal and the setpoint pressure, said flow control device comprising adome-loaded pressure regulator, wherein the dome-loaded pressureregulator is controlled by a pneumatic gas pressure applied to thedome-loaded pressure regulator.
 11. The method of claim 10, wherein thedome-loaded pressure regulator is electrically coupled to the processcontroller via an electro-pneumatic transducer.
 12. The method of claim11, further comprising adjusting the pneumatic gas pressure that isapplied to the pressure regulator dome to control the pressure of theincoming pressurized fluid based, at least in part, on a differencebetween the incoming pressure signal and the pressure setpoint.
 13. Themethod of claim 4, wherein step b) comprises using a supply line tosupply the incoming pressurized fluid to the flow restriction device,wherein a controllable flow restriction device is disposed on the supplyline in a manner effective to help control the flow rate of the incomingpressurized fluid and wherein a cooling system is disposed on the supplyline in a manner effective to cool the incoming pressurized fluid, saidcooling system being disposed on the supply line between the flowcontrol device and the flow restriction device.
 14. The method of claim4, wherein step b) comprises cooling the pressurized incoming fluid to atemperature in the range from 77 K to 110 K.
 15. The method of claim 4,wherein step b) comprises heating the pressurized incoming fluid to atemperature in the range from 300 K to 350 K.
 16. The method of claim 4,wherein the incoming pressurized fluid is selected from the groupconsisting of argon, nitrogen, hydrogen, xenon, krypton, CO2, He, or acombination thereof.
 17. The method of claim 4, wherein the streamincludes an aerosol spray.
 18. The method of claim 4, wherein the streamcomprises a gas cluster jet.
 19. The method of claim 18, wherein step c)comprises removing objects, particles, and/or contaminants from thesubstrate using the gas cluster jet.
 20. The method of claim 4, step f)comprises using a PID control algorithm to determine the control signal.21. The method of claim 4, wherein step b) comprises heating theincoming pressurized fluid.
 22. The method of claim 21, wherein step b)comprises heating the incoming pressurized fluid to a temperature in therange from 300 K to 325K. 23-31. (canceled)